Microsemi Corporation ITS08C06P | 搜芯易Sourcengine

Microsemi Corporation ITS08C06P

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
Fall Time-Max (tf)
500 ns
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
14 A
Power Dissipation-Max (Abs)
30 W
Gate-emitter Thr Voltage-Max
7.5 V
Collector-emitter Voltage-Max
600 V