GEC PLESSEY SEMICONDUCTORS ITS08C06B | 搜芯易Sourcengine

GEC PLESSEY SEMICONDUCTORS ITS08C06B

生命周期状态
Transferred
说明
Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
J-STD-609 Code
e0
Terminal Finish
Tin/Lead (Sn/Pb)
Fall Time-Max (ns)
500
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
30
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
14
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
7.5
Collector-emitter Voltage-Max (V)
600