ITE15F12
GEC PLESSEY SEMICONDUCTORS
- 生命周期状态Transferred
- 说明Insulated Gate Bipolar Transistor, 15A I(C), 1200V V(BR)CES, N-Channel
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- JESD-609 Codee0
- Surface MountNO
- Terminal FinishTin/Lead (Sn/Pb)
- Polarity/Channel TypeN-CHANNEL
- Gate-emitter Voltage-Max20 V
- Operating Temperature-Max150 Cel
- Collector Current-Max (IC)15 A
- Power Dissipation-Max (Abs)80 W
- Gate-emitter Thr Voltage-Max6 V
- Collector-emitter Voltage-Max1200 V
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ITE15F12