Toshiba Corporation ISV102 | 搜芯易Sourcengine

Toshiba Corporation ISV102

生命周期状态
Active-Unconfirmed
说明
Variable Capacitance Diode, 360pF C(T), 30V, Silicon, Abrupt
类别
Semiconductors Diodes Varactors VARIABLE CAPACITANCE DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
VARIABLE CAPACITANCE DIODE
JESD-30 Code
R-PSIP-T2
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Diode Element Material
SILICON
Breakdown Voltage-Min (V)
30
Diode Capacitance-Nom (pF)
360
Peak Reflow Temperature (Cel)
240
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Variable Capacitance Diode Classification
ABRUPT