FAIRCHILD SEMICONDUCTOR CORP ISL9V5045S3ST_F085 | 搜芯易Sourcengine

FAIRCHILD SEMICONDUCTOR CORP ISL9V5045S3ST_F085

生命周期状态
Transferred
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 51A I(C), 480V V(BR)CES, N-Channel, TO-263AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
AUTOMOTIVE IGNITION
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
MATTE TIN
Terminal Position
SINGLE
Additional Feature
LOGIC LEVEL COMPATIBLE
Fall Time-Max (ns)
15000
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
7000
Power Dissipation-Max (W)
300
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
2800
Gate-emitter Voltage-Max (V)
12
Peak Reflow Temperature (Cel)
260
Turn-off Time-Nom (toff) (ns)
13600
Collector Current-Max (IC) (A)
51
Operating Temperature-Max (Cel)
175
Gate-emitter Thr Voltage-Max (V)
2.2
Collector-emitter Voltage-Max (V)
480
Screening Level / Reference Standard
AEC-Q101
Time@Peak Reflow Temperature-Max (s)
30