ONSEMI ISL9V5045S3 | 搜芯易Sourcengine

ONSEMI ISL9V5045S3

生命周期状态
Active
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 51A I(C), 445V V(BR)CES, N-Channel, TO-262AA
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
AUTOMOTIVE IGNITION
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95 Code
TO-262AA
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
VCEsat-Max (V)
1.6
Case Connection
COLLECTOR
Terminal Position
SINGLE
Fall Time-Max (ns)
15000
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
7000
Power Dissipation-Max (W)
300
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
11000
Turn-on Time-Nom (ton) (ns)
2800
Gate-emitter Voltage-Max (V)
12
Turn-off Time-Max (toff) (ns)
30000
Turn-off Time-Nom (toff) (ns)
13600
Collector Current-Max (IC) (A)
51
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-40
Gate-emitter Thr Voltage-Max (V)
2.2
Collector-emitter Voltage-Max (V)
445