IS64NVP25618EC-250B2LA3
Integrated Silicon Solution Inc.
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明ZBT SRAM, 256KX18, 2.6ns, CMOS, PBGA119
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)14
- Length (mm)22
- JESD-30 CodeR-PBGA-B119
- Memory Width18
- Package CodeBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeZBT SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- DLA QualificationNot Qualified
- Temperature GradeAUTOMOTIVE
- Terminal PositionBOTTOM
- Memory Organization256KX18
- Number of Functions1
- Number of Terminals119
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)2.6
- Number of Words Code256K
- Memory Density (bits)4718592
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)3.5
- Supply Voltage-Max (V)2.625
- Supply Voltage-Min (V)2.375
- Supply Voltage-Nom (V)2.5
- Number of Words (words)262144
- Standby Current-Max (A)0.1
- Standby Voltage-Min (V)2.37
- Supply Current-Max (mA)285
- Package Equivalence CodeBGA119,7X17,50
- Clock Frequency-Max (MHz)250
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)125
- Operating Temperature-Min (Cel)-40
- Screening Level / Reference StandardAEC-Q100
IS64NVP25618EC-250B2LA3有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
IS64NVP25618EC-250B2LA3