IS61QDPB451236C2-500B4LI
Integrated Silicon Solution Inc.
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明QDR SRAM, 512KX36, 0.45ns, CMOS, PBGA165
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- TechnologyCMOS
- Width (mm)13
- Length (mm)15
- JESD-30 CodeR-PBGA-B165
- Memory Width36
- Package CodeLBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeQDR SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Memory Organization512KX36
- Number of Functions1
- Number of Terminals165
- Terminal Pitch (mm)1
- Access Time-Max (ns)0.45
- Number of Words Code512K
- Memory Density (bits)18874368
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.4
- Supply Voltage-Max (V)1.89
- Supply Voltage-Min (V)1.71
- Supply Voltage-Nom (V)1.8
- Number of Words (words)524288
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
- Time@Peak Reflow Temperature-Max (s)30
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IS61QDPB451236C2-500B4LI