IS61QDPB44M18B2-500B4I
Integrated Silicon Solution Inc.
- 生命周期状态Active
- 说明QDR SRAM, 4MX18, 0.45ns, CMOS, PBGA165
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- TechnologyCMOS
- Width (mm)13
- Length (mm)15
- JESD-30 CodeR-PBGA-B165
- Memory Width18
- Package CodeLBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeQDR SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Memory Organization4MX18
- Number of Functions1
- Number of Terminals165
- Terminal Pitch (mm)1
- Access Time-Max (ns)0.45
- Number of Words Code4M
- Memory Density (bits)75497472
- Package Body MaterialPLASTIC/EPOXY
- Seated Height-Max (mm)1.4
- Supply Voltage-Max (V)1.89
- Supply Voltage-Min (V)1.71
- Supply Voltage-Nom (V)1.8
- Number of Words (words)4194304
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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IS61QDPB44M18B2-500B4I