IS61NVVF204836B-7.5B2LI
Integrated Silicon Solution Inc.
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明ZBT SRAM, 2MX36, 7.5ns, CMOS, PBGA119
- 类别
- ECCN3A991.b.2.a
- ECCN GovernanceEAR
- HTS Code8542.32.00.41
- SB Code8542.32.00.40
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)14
- Length (mm)22
- JESD-30 CodeR-PBGA-B119
- Memory Width36
- Package CodeBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeZBT SRAM
- Operating ModeSYNCHRONOUS
- Parallel/SerialPARALLEL
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Memory Organization2MX36
- Number of Functions1
- Number of Terminals119
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)7.5
- Number of Words Code2M
- Memory Density (bits)75497472
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)3.5
- Supply Voltage-Max (V)1.89
- Supply Voltage-Min (V)1.71
- Supply Voltage-Nom (V)1.8
- Number of Words (words)2097152
- Standby Voltage-Min (V)1.71
- Supply Current-Max (mA)250
- Package Equivalence CodeBGA119,7X17,50
- Clock Frequency-Max (MHz)117
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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IS61NVVF204836B-7.5B2LI