IS46QR85120B-083RBLA2
Integrated Silicon Solution Inc.
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DRAM
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)10
- Access ModeDUAL BANK PAGE BURST
- Length (mm)14
- JESD-30 CodeR-PBGA-B78
- Memory Width8
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR4 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization512MX8
- Number of Functions1
- Number of Terminals78
- Terminal Pitch (mm)0.8
- Number of Words Code512M
- Memory Density (bits)4294967296
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)1.26
- Supply Voltage-Min (V)1.14
- Supply Voltage-Nom (V)1.2
- Number of Words (words)536870912
- Sequential Burst Length8
- Standby Current-Max (A)0.058
- Standby Voltage-Min (V)1.14
- Supply Current-Max (mA)245
- Interleaved Burst Length8
- Package Equivalence CodeBGA78,9X13,32
- Clock Frequency-Max (MHz)1200.48
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)105
- Operating Temperature-Min (Cel)-40
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