IS46LQ32256EA-075BLA2
Integrated Silicon Solution Inc.
- 生命周期状态Contact Mfr
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DRAM Chip Mobile LPDDR4 SDRAM 8Gbit 256Mx32 1.1V/1.8V
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)10
- Access ModeMULTI BANK PAGE BURST
- Length (mm)14.5
- JESD-30 CodeR-PBGA-B200
- Memory Width32
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee1
- Memory IC TypeLPDDR4 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- Terminal FinishTin/Silver/Copper (Sn/Ag/Cu)
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Memory Organization256MX32
- Number of Functions1
- Number of Terminals200
- Terminal Pitch (mm)0.8
- Number of Words Code256M
- Memory Density (bits)8589934592
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.1
- Supply Voltage-Max (V)1.17
- Supply Voltage-Min (V)1.06
- Supply Voltage-Nom (V)1.1
- Number of Words (words)268435456
- Sequential Burst Length16,32
- Standby Current-Max (A)0.00024
- Supply Current-Max (mA)600
- Interleaved Burst Length16,32
- Package Equivalence CodeBGA200,12X22,32/25
- Clock Frequency-Max (MHz)1333
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)105
- Operating Temperature-Min (Cel)-40
- Screening Level / Reference StandardAEC-Q100
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