IS46DR16320B-3DBLA2-TR
Integrated Silicon Solution Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR2 DRAM, 32MX16, 0.45ns, CMOS, PBGA84
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)10.5
- Access ModeFOUR BANK PAGE BURST
- Length (mm)13
- JESD-30 CodeR-PBGA-B84
- Memory Width16
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- J-STD-609 Codee3
- Memory IC TypeDDR2 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- Terminal FinishMatte Tin (Sn)
- DLA QualificationNot Qualified
- Temperature GradeINDUSTRIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization32MX16
- Number of Functions1
- Number of Terminals84
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)0.45
- Number of Words Code32M
- Memory Density (bits)536870912
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)1.9
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)33554432
- Sequential Burst Length4,8
- Standby Current-Max (A)0.008
- Supply Current-Max (mA)340
- Interleaved Burst Length4,8
- Package Equivalence CodeBGA84,9X15,32
- Clock Frequency-Max (MHz)333
- Moisture Sensitivity Level1
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)105
- Operating Temperature-Min (Cel)-40
- Screening Level / Reference StandardAEC-Q100
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