Integrated Silicon Solution Inc. IS45S32200L-7BA1-TR | 搜芯易Sourcengine

Integrated Silicon Solution Inc. IS45S32200L-7BA1-TR

生命周期状态
NRFND
说明
Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B90
Memory Width
32
Package Code
FBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
SYNCHRONOUS DRAM
Refresh Cycles
4096
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
2MX32
Number of Terminals
90
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
5.4
Number of Words Code
2M
Memory Density (bits)
67108864
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
3.3
Number of Words (words)
2097152
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max (A)
0.002
Supply Current-Max (mA)
90
Interleaved Burst Length
1,2,4,8
Package Equivalence Code
BGA90,9X15,32
Clock Frequency-Max (MHz)
143
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40
Screening Level / Reference Standard
AEC-Q100