Integrated Silicon Solution Inc. IS43R16800E-5BL | 搜芯易Sourcengine

Integrated Silicon Solution Inc. IS43R16800E-5BL

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR1 DRAM, 8MX16, 0.7ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
8
Access Mode
FOUR BANK PAGE BURST
Length (mm)
13
JESD-30 Code
R-PBGA-B60
Memory Width
16
Package Code
TBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR1 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
4096
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
8MX16
Number of Functions
1
Number of Terminals
60
Terminal Pitch (mm)
1
Access Time-Max (ns)
0.7
Number of Words Code
8M
Memory Density (bits)
134217728
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
2.7
Supply Voltage-Min (V)
2.3
Supply Voltage-Nom (V)
2.5
Number of Words (words)
8388608
Sequential Burst Length
2,4,8
Standby Current-Max (A)
0.003
Supply Current-Max (mA)
240
Interleaved Burst Length
2,4,8
Package Equivalence Code
BGA60,9X12,40/32
Clock Frequency-Max (MHz)
200
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0