IS43QR8K02S2A-075VBL
Integrated Silicon Solution Inc.
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR4 DRAM, 2GX8, CMOS, PBGA78
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)10
- Access ModeDUAL BANK PAGE BURST
- Length (mm)14
- JESD-30 CodeR-PBGA-B78
- Memory Width8
- Package CodeLFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeDDR4 DRAM
- Operating ModeSYNCHRONOUS
- Number of Ports1
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Memory Organization2GX8
- Number of Functions1
- Number of Terminals78
- Terminal Pitch (mm)0.8
- Number of Words Code2G
- Memory Density (bits)17179869184
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.4
- Supply Voltage-Max (V)1.26
- Supply Voltage-Min (V)1.14
- Supply Voltage-Nom (V)1.2
- Number of Words (words)2147483648
- Sequential Burst Length8
- Standby Current-Max (A)0.044
- Supply Current-Max (mA)558
- Interleaved Burst Length8
- Package Equivalence CodeBGA78,9X13,32
- Clock Frequency-Max (MHz)1333
- Operating Temperature-Max (Cel)95
- Operating Temperature-Min (Cel)0
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