Integrated Silicon Solution Inc. IS43LR16640C-5BL | 搜芯易Sourcengine

Integrated Silicon Solution Inc. IS43LR16640C-5BL

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR DRAM, 64MX16, 5ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs DDR DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
8
Access Mode
FOUR BANK PAGE BURST
Length (mm)
10
JESD-30 Code
R-PBGA-B60
Memory Width
16
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Position
BOTTOM
Memory Organization
64MX16
Number of Functions
1
Number of Terminals
60
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
5
Number of Words Code
64M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.1
Supply Voltage-Max (V)
1.95
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
67108864
Sequential Burst Length
2,4,8,16
Standby Current-Max (A)
0.01
Supply Current-Max (mA)
135
Interleaved Burst Length
2,4,8,16
Package Equivalence Code
BGA60,9X10,32
Clock Frequency-Max (MHz)
208
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0