Integrated Silicon Solution Inc. IS43LR16400B-6BL-TR | 搜芯易Sourcengine

Integrated Silicon Solution Inc. IS43LR16400B-6BL-TR

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Cache DRAM Module, 4MX16, 5.5ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs CACHE DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
8
Access Mode
FOUR BANK PAGE BURST
Length (mm)
10
JESD-30 Code
R-PBGA-B60
Memory Width
16
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e3
Memory IC Type
CACHE DRAM MODULE
Operating Mode
SYNCHRONOUS
Refresh Cycles
4096
Number of Ports
1
Terminal Finish
Matte Tin (Sn)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
4MX16
Number of Functions
1
Number of Terminals
60
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
5.5
Number of Words Code
4M
Memory Density (bits)
67108864
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.1
Supply Voltage-Max (V)
1.95
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
4194304
Sequential Burst Length
2,4,8,16
Standby Current-Max (A)
1.0E-5
Supply Current-Max (mA)
85
Interleaved Burst Length
2,4,8,16
Package Equivalence Code
BGA60,9X10,32
Clock Frequency-Max (MHz)
166
Moisture Sensitivity Level
1
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0