IS43LQ16512AL-062BLA1
Integrated Silicon Solution Inc.
- 生命周期状态Active
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明LPDDR4 DRAM, 512MX16, 3.5ns, CMOS, PBGA200
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)10
- Access ModeMULTI BANK PAGE BURST
- Length (mm)14.5
- JESD-30 CodeR-PBGA-B200
- Memory Width16
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory IC TypeLPDDR4 DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles8192
- Number of Ports1
- Terminal PositionBOTTOM
- Memory Organization512MX16
- Number of Functions1
- Number of Terminals200
- Terminal Pitch (mm)0.65
- Access Time-Max (ns)3.5
- Number of Words Code512M
- Memory Density (bits)8589934592
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.1
- Supply Voltage-Max (V)1.95
- Supply Voltage-Min (V)1.7
- Supply Voltage-Nom (V)1.8
- Number of Words (words)536870912
- Sequential Burst Length16,32
- Standby Current-Max (A)0.0022
- Supply Current-Max (mA)450
- Interleaved Burst Length16,32
- Package Equivalence CodeBGA200,12X20,32/25
- Clock Frequency-Max (MHz)800
- Peak Reflow Temperature (Cel)260
- Operating Temperature-Max (Cel)95
- Operating Temperature-Min (Cel)-40
- Screening Level / Reference StandardAEC-Q100
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IS43LQ16512AL-062BLA1