Integrated Silicon Solution Inc. IS43DR32800A-25EBL | 搜芯易Sourcengine

Integrated Silicon Solution Inc. IS43DR32800A-25EBL

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR2 DRAM, 8MX32, 0.4ns, CMOS, PBGA126
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.24
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
11
Access Mode
FOUR BANK PAGE BURST
Length (mm)
14
JESD-30 Code
R-PBGA-B126
Memory Width
32
Package Code
LFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Additional Feature
CAS BEFORE RAS/SELF REFRESH
Memory Organization
8MX32
Number of Functions
1
Number of Terminals
126
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.4
Number of Words Code
8M
Memory Density (bits)
268435456
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.4
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
8388608
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
10