Integrated Silicon Solution Inc. IS43DR16128-3DBI | 搜芯易Sourcengine

Integrated Silicon Solution Inc. IS43DR16128-3DBI

生命周期状态
Discontinued
说明
DDR2 DRAM, 128MX16, 0.45ns, CMOS, PBGA84
类别
Semiconductors Memory ICs DRAMs DDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
10.5
Access Mode
MULTI BANK PAGE BURST
Length (mm)
13.5
JESD-30 Code
R-PBGA-B84
Memory Width
16
Package Code
LFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
DDR2 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
128MX16
Number of Functions
1
Number of Terminals
84
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.45
Number of Words Code
128M
Memory Density (bits)
2147483648
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.4
Supply Voltage-Max (V)
1.9
Supply Voltage-Min (V)
1.7
Supply Voltage-Nom (V)
1.8
Number of Words (words)
134217728
Sequential Burst Length
4,8
Standby Current-Max (A)
0.03
Supply Current-Max (mA)
485
Interleaved Burst Length
4,8
Package Equivalence Code
BGA84,9X15,32
Clock Frequency-Max (MHz)
333
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40