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IS42VS16100E-10BL-TR

Integrated Silicon Solution Inc.

Integrated Silicon Solution Inc. IS42VS16100E-10BL-TR
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.02
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Width (mm)
    6.4
  • Access Mode
    DUAL BANK PAGE BURST
  • Length (mm)
    10.1
  • JESD-30 Code
    R-PBGA-B60
  • Memory Width
    16
  • Package Code
    VFBGA
  • Self Refresh
    YES
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e3
  • Memory IC Type
    CACHE DRAM MODULE
  • Operating Mode
    SYNCHRONOUS
  • Refresh Cycles
    2048
  • Number of Ports
    1
  • Terminal Finish
    Matte Tin (Sn)
  • DLA Qualification
    Not Qualified
  • Temperature Grade
    COMMERCIAL
  • Terminal Position
    BOTTOM
  • Additional Feature
    AUTO/SELF REFRESH
  • Memory Organization
    1MX16
  • Number of Functions
    1
  • Number of Terminals
    60
  • Terminal Pitch (mm)
    0.65
  • Access Time-Max (ns)
    7
  • Number of Words Code
    1M
  • Memory Density (bits)
    16777216
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Seated Height-Max (mm)
    1
  • Supply Voltage-Max (V)
    1.9
  • Supply Voltage-Min (V)
    1.7
  • Supply Voltage-Nom (V)
    1.8
  • Number of Words (words)
    1048576
  • Sequential Burst Length
    1,2,4,8,FP
  • Standby Current-Max (A)
    1.0E-5
  • Supply Current-Max (mA)
    50
  • Interleaved Burst Length
    1,2,4,8
  • Package Equivalence Code
    BGA60,7X15,25
  • Clock Frequency-Max (MHz)
    100
  • Moisture Sensitivity Level
    1
  • Peak Reflow Temperature (Cel)
    260
  • Operating Temperature-Max (Cel)
    70
  • Operating Temperature-Min (Cel)
    0

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