IS42VS16100D-10TE
Integrated Silicon Solution Inc.
- 生命周期状态Discontinued
- 说明Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- Width10.16 mm
- Length20.95 mm
- I/O TypeCOMMON
- TechnologyCMOS
- Access ModeDUAL BANK PAGE BURST
- JESD-30 CodeR-PDSO-G50
- Memory Width16
- Organization1MX16
- Package CodeTSOP2
- Self RefreshYES
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density16777216 bit
- Memory IC TypeSYNCHRONOUS DRAM
- Operating ModeSYNCHRONOUS
- Refresh Cycles2048
- Terminal Pitch0.8 mm
- Access Time-Max7 ns
- Number of Ports1
- Number of Words1048576 words
- Terminal FinishTIN LEAD
- Seated Height-Max1.2 mm
- Temperature GradeOTHER
- Terminal PositionDUAL
- Additional FeatureAUTO/SELF REFRESH
- Supply Current-Max50 mA
- Number of Functions1
- Number of Terminals50
- Standby Current-Max1.0E-5 Amp
- Number of Words Code1M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length1,2,4,8,FP
- Interleaved Burst Length1,2,4,8
- Package Equivalence CodeTSOP50,.46,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-25 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
- Clock Frequency-Max (fCLK)100 MHz
- Moisture Sensitivity Level3
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IS42VS16100D-10TE