Integrated Silicon Solution Inc. IS42S16100E-5B | 搜芯易Sourcengine

Integrated Silicon Solution Inc. IS42S16100E-5B

生命周期状态
Discontinued
说明
Synchronous DRAM, 1MX16, 5ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
6.4
Access Mode
DUAL BANK PAGE BURST
Length (mm)
10.1
JESD-30 Code
R-PBGA-B60
Memory Width
16
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e0
Memory IC Type
SYNCHRONOUS DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
2048
Number of Ports
1
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
1MX16
Number of Functions
1
Number of Terminals
60
Terminal Pitch (mm)
0.65
Access Time-Max (ns)
5
Number of Words Code
1M
Memory Density (bits)
16777216
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
3.6
Supply Voltage-Min (V)
3
Supply Voltage-Nom (V)
3.3
Number of Words (words)
1048576
Sequential Burst Length
1,2,4,8,FP
Standby Current-Max (A)
0.002
Supply Current-Max (mA)
170
Interleaved Burst Length
1,2,4,8
Package Equivalence Code
TSOP50,.46,32
Clock Frequency-Max (MHz)
200
Moisture Sensitivity Level
3
Operating Temperature-Max (Cel)
70
Operating Temperature-Min (Cel)
0