Integrated Silicon Solution Inc. IS42RM16160D-75BLI | 搜芯易Sourcengine

Integrated Silicon Solution Inc. IS42RM16160D-75BLI

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54
类别
Semiconductors Memory ICs DRAMs SYNCHRONOUS DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.24
SB Code
8542.32.00.15

Technology
CMOS
Width (mm)
8
Access Mode
FOUR BANK PAGE BURST
Length (mm)
13
JESD-30 Code
R-PBGA-B54
Memory Width
16
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e1
Memory IC Type
SYNCHRONOUS DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
DLA Qualification
Not Qualified
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
16MX16
Number of Functions
1
Number of Terminals
54
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
5.4
Number of Words Code
16M
Memory Density (bits)
268435456
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1
Supply Voltage-Max (V)
2.7
Supply Voltage-Min (V)
2.3
Supply Voltage-Nom (V)
2.5
Number of Words (words)
16777216
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40