IS41LV16400-60TE
Integrated Silicon Solution Inc.
- 生命周期状态Discontinued
- 说明EDO DRAM, 4MX16, 60ns, CMOS, PDSO50
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)10.16
- Access ModeFAST PAGE WITH EDO
- Length (mm)20.95
- JESD-30 CodeR-PDSO-G50
- Memory Width16
- Package CodeTSOP2
- Self RefreshNO
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- J-STD-609 Codee0
- Memory IC TypeEDO DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles4096
- Number of Ports1
- Terminal FinishTin/Lead (Sn/Pb)
- DLA QualificationNot Qualified
- Temperature GradeOTHER
- Terminal PositionDUAL
- Additional FeatureAUTO REFRESH
- Memory Organization4MX16
- Number of Functions1
- Number of Terminals50
- Terminal Pitch (mm)0.8
- Access Time-Max (ns)60
- Number of Words Code4M
- Memory Density (bits)67108864
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)3
- Supply Voltage-Nom (V)3.3
- Number of Words (words)4194304
- Standby Current-Max (A)0.0005
- Supply Current-Max (mA)80
- Package Equivalence CodeTSOP50,.46,32
- Moisture Sensitivity Level3
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-30
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IS41LV16400-60TE