INFINEON TECHNOLOGIES AG IRLR3915PBF | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRLR3915PBF

生命周期状态
Contact Mfr
RoHS
符合RoHS标准
说明
MOSFET N-CH 55V 30A DPAK
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-252AA
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Position
SINGLE
Additional Feature
ULTRA LOW RESISTANCE, AVALANCHE RATED
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
30 A
Transistor Application
SWITCHING
Feedback Cap-Max (Crss)
74 pF
DS Breakdown Voltage-Min
55 V
Operating Temperature-Max
175 Cel
Operating Temperature-Min
-55 Cel
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
120 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
200 mJ
Peak Reflow Temperature (Cel)
260
Drain-source On Resistance-Max
0.014 ohm
Pulsed Drain Current-Max (IDM)
240 A
Time@Peak Reflow Temperature-Max (s)
30