International Rectifier Corporation IRLMS5703TR | 搜芯易Sourcengine

International Rectifier Corporation IRLMS5703TR

生命周期状态
Transferred
REACH
REACH compliant
说明
Power Field-Effect Transistor, 2.3A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.95
SB Code
8541.21.00.80

Application
SWITCHING
JESD-30 Code
R-PDSO-G6
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
DUAL
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
6
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
1.7
Drain Current-Max (ID) (A)
2.3
Moisture Sensitivity Level
2
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
30
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
0.78
Pulsed Drain Current-Max (IDM) (A)
13
Drain-source On Resistance-Max (ohm)
0.2