International Rectifier Corporation IRL5602STRL | 搜芯易Sourcengine

International Rectifier Corporation IRL5602STRL

生命周期状态
Discontinued
REACH
REACH compliant
说明
Power Field-Effect Transistor, 24A I(D), 20V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-263AB
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
75
Drain Current-Max (ID) (A)
24
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
20
Peak Reflow Temperature (Cel)
225
Operating Temperature-Max (Cel)
175
Avalanche Energy Rating (Eas) (mJ)
290
Pulsed Drain Current-Max (IDM) (A)
96
Drain-source On Resistance-Max (ohm)
0.042
Time@Peak Reflow Temperature-Max (s)
30