INFINEON TECHNOLOGIES AG IRL520NSTRLPBF | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRL520NSTRLPBF

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) D2PAK T/R
类别
Semiconductors Transistors Small Signal Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e3
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
AVALANCHE RATED
Number of Elements
1
Number of Terminals
2
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
48
Drain Current-Max (ID) (A)
10
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
50
Peak Reflow Temperature (Cel)
260
Operating Temperature-Max (Cel)
175
Operating Temperature-Min (Cel)
-55
Power Dissipation Ambient-Max (W)
3.8
Avalanche Energy Rating (Eas) (mJ)
85
Pulsed Drain Current-Max (IDM) (A)
35
Drain-source On Resistance-Max (ohm)
0.22
Time@Peak Reflow Temperature-Max (s)
30