INFINEON TECHNOLOGIES AG IRHYS67134CM | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRHYS67134CM

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 19A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-XSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-257AA
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
75
Drain Current-Max (ID) (A)
19
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
150
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
67
Pulsed Drain Current-Max (IDM) (A)
76
Drain-source On Resistance-Max (ohm)
0.09