INFINEON TECHNOLOGIES AG IRHQ567110PBF | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRHQ567110PBF

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Power Field-Effect Transistor, 4.6A I(D), 100V, 1.2ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-CQCC-N28
Configuration
SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Package Shape
SQUARE
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
QUAD
Number of Elements
4
Number of Terminals
28
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (W)
12
Drain Current-Max (ID) (A)
4.6
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
44
DS Breakdown Voltage-Min (V)
100
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
122
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
70
Pulsed Drain Current-Max (IDM) (A)
18.4
Drain-source On Resistance-Max (ohm)
1.2
Screening Level / Reference Standard
RH - 100K Rad(Si)
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED