INFINEON TECHNOLOGIES AG IRHNMC57214SE | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRHNMC57214SE

生命周期状态
Active
说明
Power Field-Effect Transistor, 3.7A I(D), 250V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-CBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
40
Drain Current-Max (ID) (A)
3.7
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
14.1
DS Breakdown Voltage-Min (V)
250
Feedback Cap-Max (Crss) (pF)
1.2
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
30.8
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
34
Pulsed Drain Current-Max (IDM) (A)
14.8
Drain-source On Resistance-Max (ohm)
1.7
Screening Level / Reference Standard
MIL-STD-750; RH - 100K Rad(Si)
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED