INFINEON TECHNOLOGIES AG IRHNJ63234 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRHNJ63234

生命周期状态
Active
说明
Power Field-Effect Transistor, 12.4A I(D), 250V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-CBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
75
Drain Current-Max (ID) (A)
12.4
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
55
DS Breakdown Voltage-Min (V)
250
Turn-off Time-Max (toff) (ns)
90
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
56
Pulsed Drain Current-Max (IDM) (A)
49.6
Drain-source On Resistance-Max (ohm)
0.21
Screening Level / Reference Standard
RH - 300K Rad(Si)