International Rectifier Corporation IRHN9250 | 搜芯易Sourcengine

International Rectifier Corporation IRHN9250

生命周期状态
Transferred
REACH
REACH compliant
说明
Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
R-CBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
HIGH RELIABILITY
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
150
Drain Current-Max (ID) (A)
14
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Operating Temperature-Max (Cel)
150
Power Dissipation Ambient-Max (W)
100
Avalanche Energy Rating (Eas) (mJ)
500
Pulsed Drain Current-Max (IDM) (A)
56
Drain-source On Resistance-Max (ohm)
0.33