INFINEON TECHNOLOGIES AG IRHMB597064 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRHMB597064

生命周期状态
Active
说明
Power Field-Effect Transistor, 45A I(D), 60V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
S-CSSO-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-254AA
Package Shape
SQUARE
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Position
SINGLE
Number of Elements
1
Number of Terminals
3
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
208
Drain Current-Max (ID) (A)
45
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
185
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
310
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Turn-off Time-Max (toff) (ns)
135
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
890
Pulsed Drain Current-Max (IDM) (A)
180
Drain-source On Resistance-Max (ohm)
0.018
Screening Level / Reference Standard
MIL-19500; MIL-STD-750; RH - 100K Rad(Si)
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED