International Rectifier Corporation IRHM2C50SED | 搜芯易Sourcengine

International Rectifier Corporation IRHM2C50SED

生命周期状态
Discontinued
REACH
REACH compliant
说明
Power Field-Effect Transistor, 10.4A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-MSFM-P3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
HIGH RELIABILITY, RADIATION HARDENED
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
10.4 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
600 V
Operating Temperature-Max
150 Cel
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
500 mJ
Drain-source On Resistance-Max
0.65 ohm
Pulsed Drain Current-Max (IDM)
41.6 A