INFINEON TECHNOLOGIES AG IRHLG7S3110 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRHLG7S3110

生命周期状态
Active
REACH
REACH compliant
说明
Power Field-Effect Transistor, 1.8A I(D), 100V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-036AB
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
R-CDIP-T14
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
MO-036AB
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Terminal Position
DUAL
Number of Elements
1
Number of Terminals
14
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
1.4
Drain Current-Max (ID) (A)
1.8
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
55
DS Breakdown Voltage-Min (V)
100
Feedback Cap-Max (Crss) (pF)
2.7
Turn-off Time-Max (toff) (ns)
85
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
97
Pulsed Drain Current-Max (IDM) (A)
7.2
Drain-source On Resistance-Max (ohm)
0.33
Screening Level / Reference Standard
MIL-STD-750; RH - 300K Rad(Si)