INFINEON TECHNOLOGIES AG IRHLF7970Z4 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRHLF7970Z4

生命周期状态
Active
说明
Power Field-Effect Transistor, 1.5A I(D), 60V, 1.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
SWITCHING
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-205AF
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
5
Drain Current-Max (ID) (A)
1.5
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
69
DS Breakdown Voltage-Min (V)
60
Feedback Cap-Max (Crss) (pF)
8
Turn-off Time-Max (toff) (ns)
39
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Avalanche Energy Rating (Eas) (mJ)
11
Pulsed Drain Current-Max (IDM) (A)
6
Drain-source On Resistance-Max (ohm)
1.35
Screening Level / Reference Standard
MIL-STD-750; RH - 100K Rad(Si)