International Rectifier Corporation IRGSL6B60KDPBF | 搜芯易Sourcengine

International Rectifier Corporation IRGSL6B60KDPBF

生命周期状态
EOL
RoHS
符合RoHS标准
说明
IRGSL6B60 - DISCRETE IGBT WITH A
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Application
MOTOR CONTROL
JESD-30 Code
R-PSIP-T3
Configuration
SINGLE WITH BUILT-IN DIODE
JEDEC-95 Code
TO-262
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
J-STD-609 Code
e3
Case Connection
COLLECTOR
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Fall Time-Max (ns)
27
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
26
Power Dissipation-Max (W)
90
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
45
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
260
Turn-off Time-Nom (toff) (ns)
258
Collector Current-Max (IC) (A)
13
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5.5
Collector-emitter Voltage-Max (V)
600
Time@Peak Reflow Temperature-Max (s)
30