INFINEON TECHNOLOGIES AG IRGSL4B60KPBF | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRGSL4B60KPBF

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 12A I(C), 600V V(BR)CES, N-Channel, TO-262
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSIP-T3
Configuration
SINGLE
JEDEC-95 Code
TO-262
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
IN-LINE Meter
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Position
SINGLE
Fall Time-Max (tf)
89 ns
Number of Elements
1
Rise Time-Max (tr)
23 ns
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
40 ns
Gate-emitter Voltage-Max
20 V
Turn-off Time-Nom (toff)
199 ns
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
12 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
63 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
5.5 V
Collector-emitter Voltage-Max
600 V