INFINEON TECHNOLOGIES AG IRGS4B60KD1 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRGS4B60KD1

生命周期状态
Discontinued
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 11A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Case Connection
COLLECTOR
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Position
SINGLE
Additional Feature
ULTRA FAST SOFT RECOVERY
Number of Elements
1
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
MOTOR CONTROL
Turn-on Time-Nom (ton)
40 ns
Turn-off Time-Nom (toff)
199 ns
Collector Current-Max (IC)
11 A
Moisture Sensitivity Level
1
Transistor Element Material
SILICON
Collector-emitter Voltage-Max
600 V
Peak Reflow Temperature (Cel)
225
Time@Peak Reflow Temperature-Max (s)
30