INFINEON TECHNOLOGIES AG IRGS14C40LTRRPBF | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRGS14C40LTRRPBF

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 20A I(C), 370V V(BR)CES, N-Channel, TO-263AB
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
R-PSSO-G2
Configuration
SINGLE WITH BUILT-IN DIODE AND RESISTOR
JEDEC-95 Code
TO-263AB
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
GULL WING
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Position
SINGLE
Additional Feature
LOW SATURATION VOLTAGE
Number of Elements
1
Rise Time-Max (tr)
4000 ns
Number of Terminals
2
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Application
AUTOMOTIVE IGNITION
Turn-on Time-Nom (ton)
3700 ns
Gate-emitter Voltage-Max
12 V
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
20 A
Moisture Sensitivity Level
1
Power Dissipation-Max (Abs)
125 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
2.2 V
Collector-emitter Voltage-Max
370 V