INFINEON TECHNOLOGIES AG IRGS10B60KDPBFTRR | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRGS10B60KDPBFTRR

生命周期状态
Active
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Polarity/Channel Type
N-Channel
Transistor Element Material
SILICON
Turn-on Time-Nom (ton) (ns)
4000
Gate-emitter Voltage-Max (V)
20
Turn-off Time-Nom (toff) (ns)
294
Collector Current-Max (IC) (A)
35
Operating Temperature-Max (Cel)
150
Operating Temperature-Min (Cel)
-55
Gate-emitter Thr Voltage-Max (V)
5.5
Collector-emitter Voltage-Max (V)
600