INFINEON TECHNOLOGIES AG IRGP4660D-EPBBF | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRGP4660D-EPBBF

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

Surface Mount
NO
Fall Time-Max (tf)
46 ns
Rise Time-Max (tr)
56 ns
Polarity/Channel Type
N-CHANNEL
Gate-emitter Voltage-Max
20 V
Operating Temperature-Max
175 Cel
Collector Current-Max (IC)
100 A
Power Dissipation-Max (Abs)
330 W
Gate-emitter Thr Voltage-Max
6.5 V
Collector-emitter Voltage-Max
600 V