International Rectifier Corporation IRGNI165F06 | 搜芯易Sourcengine

International Rectifier Corporation IRGNI165F06

生命周期状态
Transferred
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 165A I(C), 600V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
POWER CONTROL
JESD-30 Code
R-PUFM-X4
Configuration
SINGLE WITH BUILT-IN CONFIGURABLE DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.3
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
CHOPPER SWITCH
Number of Elements
1
Number of Terminals
4
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (W)
379
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Collector Current-Max (IC) (A)
165
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5.5
Collector-emitter Voltage-Max (V)
600
Power Dissipation Ambient-Max (W)
379