International Rectifier Corporation IRGNI0075M12PBF | 搜芯易Sourcengine

International Rectifier Corporation IRGNI0075M12PBF

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
R-PUFM-X7
Configuration
SINGLE WITH BUILT-IN CONFIGURABLE DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.8
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
FAST
Number of Elements
1
Number of Terminals
7
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
75
Collector-emitter Voltage-Max (V)
1200
Power Dissipation Ambient-Max (W)
380
Time@Peak Reflow Temperature-Max (s)
40