INFINEON TECHNOLOGIES AG IRGMC50FD | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG IRGMC50FD

生命周期状态
Discontinued
说明
Insulated Gate Bipolar Transistor, 35A I(C), 600V V(BR)CES, N-Channel, TO-254AA
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-XSFM-P3
Configuration
SINGLE
JEDEC-95 Code
TO-254AA
JESD-609 Code
e0
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
FAST
Number of Elements
1
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Operating Temperature-Max
150 Cel
Collector Current-Max (IC)
35 A
Power Dissipation-Max (Abs)
150 W
Transistor Element Material
SILICON
Gate-emitter Thr Voltage-Max
5.5 V
Collector-emitter Voltage-Max
600 V