International Rectifier Corporation IRGMC30FUPBF | 搜芯易Sourcengine

International Rectifier Corporation IRGMC30FUPBF

生命周期状态
Transferred
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 23A I(C), 600V V(BR)CES, N-Channel, TO-254AA
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

JESD-30 Code
S-XSFM-P3
Configuration
SINGLE
JEDEC-95 Code
TO-254AA
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
VCEsat-Max (V)
2.1
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
SINGLE
Additional Feature
FAST
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Transistor Element Material
SILICON
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
260
Collector Current-Max (IC) (A)
23
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5.5
Collector-emitter Voltage-Max (V)
600
Power Dissipation Ambient-Max (W)
75
Time@Peak Reflow Temperature-Max (s)
40