International Rectifier Corporation IRGKIN025M12PBF | 搜芯易Sourcengine

International Rectifier Corporation IRGKIN025M12PBF

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel
类别
Semiconductors Transistors Insulated Gate Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
MOTOR CONTROL
JESD-30 Code
R-PUFM-X5
Configuration
SINGLE WITH BUILT-IN CONFIGURABLE DIODE
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
UNSPECIFIED
VCEsat-Max (V)
2.7
Case Connection
ISOLATED
DLA Qualification
Not Qualified
Terminal Position
UPPER
Additional Feature
LOW CONDUCTION LOSS
Number of Elements
1
Number of Terminals
5
Package Body Material
PLASTIC/EPOXY
Polarity/Channel Type
N-CHANNEL
Rise Time-Max (tr) (ns)
250
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
250
Turn-on Time-Nom (ton) (ns)
200
Gate-emitter Voltage-Max (V)
20
Peak Reflow Temperature (Cel)
260
Turn-off Time-Max (toff) (ns)
200
Turn-off Time-Nom (toff) (ns)
125
Collector Current-Max (IC) (A)
50
Operating Temperature-Max (Cel)
150
Gate-emitter Thr Voltage-Max (V)
5.5
Collector-emitter Voltage-Max (V)
1200
Power Dissipation Ambient-Max (W)
385
Time@Peak Reflow Temperature-Max (s)
40